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| STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI s s s s s V DSS 600 V R DS( on) < 1.2 ID 3.8 A TYPICAL RDS(on) = 1 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION 3 1 2 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT s ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS ID ID ID M(*) P tot V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Value 600 600 20 3.8 2.4 24 40 0.32 2000 -65 to 150 150 Unit V V V A A A W W/o C V o o C C (*) Pulse width limited by safe operating area May 1993 1/9 STP6N60FI THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 3.12 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) Max Value 6 370 17 3.7 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS I DS S IG SS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VG S = 0 Min. 600 250 1000 100 Typ. Max. Unit V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = 20 V T c = 125 oC ON () Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current Test Conditions ID = 250 A T c = 100 oC 6 Min. 2 Typ. 3 1 Max. 4 1.2 2.4 Unit V A V GS = 10V ID = 3 A V GS = 10V I D = 3 A V DS > ID( on) x RD S(on) max V GS = 10 V DYNAMIC Symbol gfs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > ID( on) x RD S(on) max V DS = 25 V f = 1 MHz ID = 3 A VG S = 0 Min. 2 Typ. 4.8 1150 160 75 1500 240 110 Max. Unit S pF pF pF 2/9 STP6N60FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 300 V I D = 3 A VGS = 10 V R G = 50 (see test circuit, figure 3) V DD = 480 V I D = 6 A R G = 50 VGS = 10 V (see test circuit, figure 5) V DD = 480 V ID = 6 A V GS = 10 V Min. Typ. 50 140 240 Max. 65 175 Unit ns ns A/s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 78 8 41 98 nC nC nC SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 480 V I D = 6 A R G = 50 VGS = 10 V (see test circuit, figure 5) Min. Typ. 100 27 145 Max. 125 34 180 Unit ns ns ns SOURCE DRAIN DIODE Symbol IS D I SDM(*) V S D () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 6 A V GS = 0 750 13.5 38 I SD = 6 A di/dt = 100 A/s T j = 150 o C V DD = 100 V (see test circuit, figure 5) Test Conditions Min. Typ. Max. 3.8 24 2 Unit A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/9 STP6N60FI Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/9 STP6N60FI Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/9 STP6N60FI Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms 6/9 STP6N60FI Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/9 STP6N60FI ISOWATT220 MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 3.66 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 O F D G1 E H F2 123 L2 L4 P011G 8/9 G STP6N60FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 9/9 |
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